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savantic semiconductor product specification silicon pnp power transistors 2SA1108 d escription with mt-200 package high power dissipation applications for power amplifier applications pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -130 v v ceo collector-emitter voltage open base -130 v v ebo emitter-base voltage open collector -5 v i c collector current -12 a i b base current -1.2 a p c collector power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (mt-200) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1108 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma ; i b =0 -130 v v (br)ebo emitter-base breakdown voltage i e =-1ma ; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-5a ;i b =-0.5a -2.0 v v be base-emitter on voltage i c =-5a ; v ce =-5v -2.0 v i cbo collector cut-off current v cb =-130v; i e =0 -5 a i ebo emitter cut-off current v eb =-5v; i c =0 -5 a h fe-1 dc current gain i c =-2a ; v ce =-5v 55 160 h fe-2 dc current gain i c =-5a ; v ce =-5v 35 f t transition frequency i c =-1a ; v ce =-10v 60 mhz downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1108 package outline fig.2 outline dimensions downloaded from: http:///

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